The effect of phosphorus on diamond lattice constant is about six times larger than that of boron. Lattice constant of boron and phosphorus doped diamond trends to increase when impurity concentration increases. On the other hand, lattice constant of 4H-SiC trends to increase when aluminum concentration increases. Lattice constant of 4H-SiC trends to decrease when nitrogen concentration increases. The effect of phosphorus on diamond lattice constant is about six times larger than that of boron.ĪB - Calculations of lattice constant of 4H-SiC and diamond have been carried out. On the other hand, lattice constant of 4H-SiC trends to increase when aluminum concentration increases. Variation of lattice parameter of Si1-xGex system with composition can be evaluated by using the following quadratic expression (Dismukes et al., 1964). N2 - Calculations of lattice constant of 4H-SiC and diamond have been carried out. T1 - Calculation of lattice constant of 4H-SiC as a function of impurity concentration
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